Its intelligent Multi-channel Server adapts the content for each mobile device based on the specific device characteristics and capabilities, as defined in the device repository. 它的智能Multi-channelServer将根据在设备储存库中定义的特定设备特征和功能针对每个移动设备调整内容。
The final device specifications should cover ALL of the device characteristics. 最终的器械规格应该包括所有的器械特征。
Abstract: Application of near infrared laser diode to gas sensing is reviewed, followed by discussion on both the device characteristics and experimental techniques. 文摘:综述了近红外激光二极管在气体传感中的应用,讨论了用于这一技术的器件和实验技术。
Monitoring and control of process parameters and component and device characteristics during production; 监测和控制工艺参数和元件及装置特点,在生产;
Realistic device characteristics can be analyzed under actual operating conditions by varying the test frequency, test signal level, and dc bias. 切合实际器件特性可以分析根据实际营运情况,由不同检测频率,测试信号水平和直流偏置。
The structure and preparation of the fluorescent detector consisting of 16 α-Si: H PIN heterojunction photodiodes are given. The optimum design and device characteristics such as dark current and sensitivity are discussed in detail. 研究一种新型的非晶硅PIN异质结荧光探测器的结构和制备工艺,详细讨论了探测器单元的结构优化设计和暗电流和灵敏度等特性。
In this paper a novel structure of SiGe power switching diodes is presented. On the basis of analyzing the structure mechanism, we simulated the device characteristics using Medici and carried out the optimal design. 提出了一种新型SiGe/Si异质结PiN开关功率二极管结构,在分析器件结构机理的基础上,用Medici模拟了该器件的特性。
Then, we probe into the building of the physical platform of line card. It involves the device characteristics, circuit design and relevant configuration of physical layer chip, FPGA, FPGA's configuration device and serial backplane transceiver. 然后探讨了光纤通道交换机线卡物理平台的构建,详细介绍了物理平台的主要组成部分,物理层芯片、FPGA与配置器件及线卡串行收发器的器件特性和线路设置及相关配置。
The effect of different ratios of PVK on the device characteristics is also studied. 文章同时比较了几种不同PVK掺杂浓度对于器件性能的影响。
Basic principles of device modeling and simulation were introduced and by using process simulating software basic device structure were implemented, device characteristics were analyzed in succession. 首先介绍了器件建模的基本原理及相关模拟技术,然后利用工艺模拟软件生成器件基本结构,并对其基本特性进行了分析;
In semiconductor manufacturing process, the distributing of the process parameter will affect the structural variations of devices and leads to variations in device characteristics and circuit performances. 集成电路工艺过程中,工艺参数的分布会引起器件结构参数和电学参数变化。
SNMP agent is the kernel entity of SNMP network management, it is a kind of software resident in the managed network devices, which can access their run-time status, device characteristics, system configuring parameters and other correlative information. SNMP代理是SNMP网管方式中的核心实体,它是一种软件模块,存在于被管理的网络设备上,用来访问运行状态、设备特性、系统配置以及其他相关信息。
In this thesis, based on the analyses of the device characteristics, the application of the neuMOS in the voltage-mode multiple-valued logic circuits has been researched. 本文在对器件的特性进行分析的基础上,对多输入浮栅MOS晶体管在电压型多值逻辑电路中的应用进行了研究。
They reflect device characteristics and are essentially relational databases describing device information. 它是用来反映设备的特性,本质上是描述设备信息的关系数据库。
An analysis of the operation principle of the junction barrier controlled Schottky rectifier is made, and the device characteristics versus structural parameters is discussed in detail. 本文在分析结势垒控制肖特基整流管工作原理的基础上,详细讨论了器件特性与结构参数的关系;
A novel open multifunction instrument verification device was proposed and designed in this paper, the working principle was explained, and the device characteristics in design was emphasized. 提出并设计了一种新型开放式多功能仪表检定装置,说明了它的工作原理,重点指出其设计上的特点。
In this paper, the mechanism of harmonic increments caused by device characteristics are analyzed in detail, and the compensation algorithm of a forward voltage drop is proposed. 该文详细分析了由器件特性引起的谐波增大的机理,提出了管压降补偿的方法。
Secondly, this thesis describes the detailed device characteristics, design restrictions, design idea of the IP-STB, the hardware system and the conditional access system ( CAS). 接着详细描述了IP机顶盒的设备特征、设计约束、设计思路、硬件平台和条件接收系统。
Based on the introduction of high-voltage pillar reactive automatic compensation device characteristics, optimized installation distribution is analyzed, then a dispersive compensation centralized control project of 10 kV distribution line is introduced. 在介绍高压柱上无功自动补偿装置特点的基础上,对优化安装布局进行了分析,并介绍了10kV配电线路一种分散补偿集中监控方案。
The mechanism of operation, experimental realisation and device characteristics are persented. 对操作机理、实验实现和器件特性。
Analyzes the relationships between LDD doping concentration, depth and device characteristics in detail. The device characteristics include channel field, subthreshold slop, etc. Reflects restraint of LDD structure to HCE, while keeping the substrate current as criterion. 详细分析了轻掺杂漏区的浓度和深度与沟道电场和亚阈斜率等器件特性间的关系,并以衬底电流为标准反映了LDD结构对HCE的抑制作用。
The ability of power network maintaining its power supply reliability and quality is restricted by power network structure, line and load characteristics, generator drive device characteristics and relay protection mechanism. 电力网络维持其供电可靠性及电能质量的能力是受电网结构、线路和负荷特性、发电机动力设备特性以及继电保护机制等因素影响的。
This model has significant meaning for research on device characteristics and process design. 因此本模型对于器件物理特性的研究和工艺设计有很好的指导意义。
The main factors to limit conversion efficiency of CdTe solar cells are analyzed after the device characteristics were measured. 结合器件特性表征分析了限制CdTe太阳电池转换效率的主要因素,提出高效率CdTe太阳电池的新结构。
Device characteristics were obtained by adjust device geometry and physical parameters with theoretical analysis and MEDICI simulation. 通过理论分析及MEDICI模拟验证,得到了器件特性与器件的几何尺寸,物理参数的关系。
Analyzes the semiconductor laser facet catastrophic optical damage mechanisms and coating damage mechanisms, the process of COD and influence on device characteristics are established. 从半导体激光器的腔面损伤机理出发,分析半导体激光器光学灾变损伤(COD)机理和腔面膜损伤机理,确立COD的发生过程和对器件特性的影响。
Based on the proposed model, an explicit quantitative expression of switching time can be given. We also discuss the device characteristics adapt to the structure and logic operations, and the mode of control voltages. Thirdly, the structure for memristor memory and computing is designed. 基于提出的模型,本研究给出了过渡时间的显式定量表达,理论上分析了逻辑操作需要的电路结构与器件特性,以及控制电压的方式。第三,提出忆阻器存储运算结构设计。
This design got the dc characteristic and C-V characteristic curve, forecasted the high frequency characteristics, and analyzed the influence of the main parameters driven on the device characteristics deeply. 本设计得到了该器件的直流特性和C-V特性曲线,预测了器件的高频特性,并深入地分析了各重要参数对器件特性的影响。
It mainly includes the simulation of the depth of the buried gate, the gate horizontal position, the gate shape, the gate field plate structure, and the gate length on device characteristics. 接下来研究了栅极结构参数,包括埋栅深度、栅极水平位置、栅极形状、栅场板结构以及栅长等对器件特性的影响。
Then ISE software is used to simulate and validate the device characteristics. Through the simulation of the device voltage, threshold voltage and the resistance to optimize the values got by approximate calculation. 然后采用ISE软件对器件特性进行模拟和验证,通过对器件耐压、阈值电压与导通电阻的模拟来对前面计算得到的各个器件参数进行优化,从而得到设计的最优值。